Dresden 2006 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 9: Poster I

HL 9.65: Poster

Montag, 27. März 2006, 15:15–17:45, P3

Drift velocity of electrons and Existence of the pinch effect in the Ge-n — •Mehdi Vaezzadeh, Majid Vaezzadeh, Mahmoud Jafari, and Ehsan Noroozifar — Dept. of Physics K.N.Toosi University of technology, P.O. Box: 15875-4416 Tehran Iran

A theoretical model has been proposed. Based on this model we have calculated analytically the increasing of longitudinal resistance by applying magnetic field on the Ge-n. Our work is based on decreasing the cross section of conduction electrons which leads to determination of the drift velocity of itinerant electrons. The repulsion of electrons in a direction (Hall Effect) decreases the cross section of the itinerant electrons which causes the longitudinal resistance of the sample increases. With increasing the external magnetic field the longitudinal resistance of the sample increases. By fitting the calculated results with the experimental results of the Ge-n in the range of 0<B<350 mT we have determined the drift velocity of itinerant electrons. We have also calculated the main cross section of transmitted current in the absence of the magnetic field. The results indicate the existence of the pinch effect in this system.