Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 9: Poster I

HL 9.83: Poster

Monday, March 27, 2006, 15:15–17:45, P3

Low-temperature electrical transport in semiconducting nanowires — •Marc Scheffler, Jorden van Dam, Floris Zwanenburg, and Leo Kouwenhoven — Kavli Institute of NanoScience, Delft University of Technology, POB 5046, 2600GA Delft, The Netherlands

Semiconductor nanowires offer a new route to the study of electronic transport on mesoscopic length scales, as their diameter sets an intrinsic constriction to the range of 100 nm and below. Additional structures along the longitudinal direction can be defined during growth (heterostructures) as well as by metallic contacts and gates.

We study the electronic transport in InP and InAs nanowires at low temperatures. Here the choice of appropriate metallic contacts can induce new electronic phases, e.g. superconductivity. Even more tunability is given by different gate geometries that we use to deplete the nanowire either as a whole or locally. Local gating can then lead to controllable separation of different sections of a nanowire as required for devices like point contacts or quantum dots.