Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 9: Poster I

HL 9.90: Poster

Montag, 27. März 2006, 15:15–17:45, P3

Electrical Properties of Fe/GaAs-Heterostructures in Cleaved-Edge-Overgrowth Geometry — •Fang-Yuh Lo¹, E. Schuster², C. Urban³, D. Reuter¹, W. Keune², U. Köhler³, and A. D. Wieck¹ — ¹Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum — ²Laboratorium für Angewandte Physik, Universität Duisburg-Essen, Lotharstr. 1, 47048 Duisburg — ³Experimentalphysik IV/Oberflächenphysik, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum

In order to have clean interfaces, thin Fe layers were grown on the UHV-cleaved edge of GaAs-based heterostructures. Then the thin Fe films were patterned into spin-valve structure via the focused ion beam technique. The Fe/heterostructure contact revealed Schottky character, which could act as a tunnel junction for injecting spins from Fe into semiconductors. Magnetoresistances between 0.01% and 0.07% were observed for different heterostructures, and the possible mechanisms will be discussed. We gratefully acknowledge financial support from the DFG SFB491 and DFG GRK384.