Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 9: Poster I

HL 9.93: Poster

Monday, March 27, 2006, 15:15–17:45, P3

Spin-polarized injection from ferromagnetic semiconductor (Ga,Mn)As into GaAs. — •Andreas Einwanger, Mariusz Ciorga, Janusz Sadowski, Werner Wegscheider, and Dieter Weiss — Universität Regensburg, Experimentelle und Angewandte Physik, D-93040 Regensburg

We have fabricated devices to investigate spin-polarized injection of electrons from ferromagnetic semiconductor (Ga,Mn)As into n and n+ GaAs epilayers. The measurements are performed in lateral spin valve configuration. Two spin-aligning contacts with different coercive fields are employed: one to inject spin-polarized carriers and the other to detect obtained spin-polarization through changes in the in-plane magnetoresistance occuring when magnetization of each of the two contacts is separately switched by in-plane magnetic field. To obtain the efficient spin-polarized injection of electrons from a p-type (Ga,Mn)As into a n-type active layer we employ a spin Esaki diode structure p+(Ga,Mn)As/n+GaAs under reverse bias as spin-aligning contacts. This way we avoid problems related to short spin-relaxation times of holes. The distance between spin injector and detector can be varied to investigate spin relaxation length in the material. We report on first results of our experiments on this all-electrical spin-polarized injection and detection scheme.