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HL: Halbleiterphysik

HL 9: Poster I

HL 9.97: Poster

Montag, 27. März 2006, 15:15–17:45, P3

Characterisation of Ga(N,As,P)/GaP QW structures for III-V lasers on Si substrates by modulation spectroscopy — •C. Karcher, G. Blume, P.J. Klar, B. Kunert, K. Volz, W. Stolz, and W. Heimbrodt — Dept. Physics and WZMW, Philipps-University of Marburg, Germany

Recently lasing was achieved at 100 K in GaP based laser structures employing highly strained Ga(N,As)/GaP and Ga(N,As,P)/GaP single quantum well structures in the active region. This opens the field for achieving III-V lasers on Si substrate as the lattice-mismatch between GaP and Si is rather small. We study these lasers and related quantum well structures of different well width and varying composition grown on (100) GaP substrates by photomodulated reflectance, electroreflectance, and photocurrent spectroscopy. The obtained modulation spectra and photocurrent characteristics are analysed in terms of the band alignment of the quantum well structures. These results yield additional knowledge about the band structure essential for achieving room-temperature lasing in the near future.