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MA: Magnetismus

MA 18: Spin-Dynamics, Magnetization Reversal I

MA 18.11: Vortrag

Dienstag, 28. März 2006, 12:45–13:00, HSZ 403

Domain Wall generation and movement in narrow GMR lines — •Roland Mattheis, Marco Diegel, Uwe Huebner, Dominique Schmidt, and Hardy Koebe — Institute for Physical High Technology, A.-Einstein-Str. 9, D-07745 Jena

Well defined motion of domain walls in narrow lines offer chances for new magneto electronic applications like magnetic logic [1] or multiturn counters for automotive and automation applications [2]. To analyse the behaviour of the domain walls we investigate the generation and movement of the 180^∘ domain walls in 10 and 20 nm thick Ni81Fe19 layers as a part of a GMR stack. The structures consist of 150 x 250 nm wide lines with and without a domain generator at one end of the 0.500 mm line. By measuring the time and magnetic field dependence of the resistance we determine the distribution of the magnetic field necessary for the generation of a domain wall and the field dependence of the domain wall movement (domain wall mobility). Pinning and depinning of the domain walls was used to characterize geometrical perfection of the used structures. ∖Zitat{1}{Allwood D. A., Xiong G., Cooke M. D., Faulkner C. C., Atkinson D., Vernier N. and Cowburn R. P., Science, 296 (2002) 2003} ∖Zitat{2}{M. Diegel, R. Mattheis, E. Halder, IEEE Trans. Magn. 40 (2004) 2655}