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MA: Magnetismus

MA 18: Spin-Dynamics, Magnetization Reversal I

MA 18.8: Vortrag

Dienstag, 28. März 2006, 12:00–12:15, HSZ 403

Ballistic Bit Addressing in a Magnetic Memory Cell Array — •Hans Werner Schumacher — Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig

A ringing free bit addressing scheme for magnetic random access memories (MRAM) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select field pulses. Numerical solutions of a single spin model of an MRAM cell show that the pulse parameters can be chosen such that the application of the half select pulse induces a full precessional turn of the magnetization (no switch) whereas the superposition of two half select pulses induces a half precessional turn (switch) [1]. With well adapted pulse parameters both full-select and half-select switching occurs on ballistic trajectories characterized by the absence of ringing after magnetic pulse decay. Such ballistic bit addressing allows ultra high MRAM write clock rates and a highly parallel write operation [2].

References: [1] H. W. Schumacher, Appl. Phys. Lett. 87, 042504 (2005). [2] H. W. Schumacher, J. Appl. Phys. 98, 033910 (2005).