Dresden 2006 – scientific programme

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MA: Magnetismus

MA 20: Poster: Films(1-36) Transp(37-56) Ex.Bias(57-67) Spindyn(68-80) Micromag(81-95) Particle(96-109) Imag.+Surface(110-113) Spinelectr(114-122) Theory+Micromag(123-131) Spinstr+Aniso(132-142) MagMat(143-156) Meas(157,158) MolMag+Kondo(159-162) Postdead(163-)

MA 20.12: Poster

Tuesday, March 28, 2006, 15:15–19:15, P1

A FMR-investigation of 111 oriented NiMnSb grown by MBE — •A. Riegler, F. Lochner, P. Bach, G. Schmidt, and L. W. Molenkamp — Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg,Germany

We present the results of frequency domain ferromagnetic resonance measurements performed on NiMnSb layers on InP-b sustrate grown on (111) surfaces. Epitaxial NiMnSb layers are interesting for spin injection into semiconductors. Especially for layers grown on InP (111)-b surfaces a fully spin polarized interface is predicted [1]. While many FMR results on layers grown on (001) surfaces have been reported in the past years [2] nothing is known so far on the properties of thin (111) layers. We have performed frequency domain studies of NiMnSb (111) layers with thicknesses of 10, 40 and ≈ 200 nm grown on (In,Ga)As buffer layers. Surprisingly we observe a uniaxial anisotropy for all layers which becomes weaker with increasing layer thickness. We attribute this anisotropy to the asymmetry induced by a miscut of the substrates which is used to improve the epitaxial growth in molecular beam epitaxy.

We acknowledge financial support by BMBF (grant 13N8284) and we thank D. Grundler and colleagues for helpful discussions.

[1] R. A. de Groot et al., Physical Review Letters 50, 2024 (1983)

[2] B. Heinrich et al., JOURNAL OF APPLIED PHYSICS 95, 7462 (2004)