Dresden 2006 – scientific programme
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MA: Magnetismus
MA 20: Poster: Films(1-36) Transp(37-56) Ex.Bias(57-67) Spindyn(68-80) Micromag(81-95) Particle(96-109) Imag.+Surface(110-113) Spinelectr(114-122) Theory+Micromag(123-131) Spinstr+Aniso(132-142) MagMat(143-156) Meas(157,158) MolMag+Kondo(159-162) Postdead(163-)
MA 20.14: Poster
Tuesday, March 28, 2006, 15:15–19:15, P1
Investigation of the magnetic anisotropy of Ga1−xMnxP via ferromagnetic resonance spectroscopy — •Michael Kraus1, Christoph Bihler1, Martin S. Brandt1, Mike A. Scarpulla2, Rouin Farshchi2, and Oscar D. Dubon2 — 1Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany — 2Department of Materials Science and Engineering, University of California at Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Recently, Scarpulla and coworkers [1] have shown that Ga1−xMnxP can be ferromagnetic with a Curie temperature of up to 65 K (x=0.06). In Ga1−xMnxP, the ferromagnetic exchange interaction is presumed to be mediated by localized holes in a Mn-impurity band, which is separated from the GaP holes band by ∼26 meV. In this contribution, we present an analysis of the magnetic anisotropy of this novel diluted magnetic semiconductor by means of ferromagnetic resonance (FMR) spectroscopy. We attribute the angular dependence of the FMR fields to the presence of a cubic magnetic anisotropy along the main crystalline <100> axes and two additional uniaxial magnetic anisotropies along the [100] growth direction and the in-plane [001] axis. Possible origins of these anisotropies will be discussed. Upon post-growth incorporation of hydrogen, the ferromagnetism in Ga1−xMnxP disappears, caused by a reduction of the hole concentration, as previously observed for hydrogenated Ga1−xMnxAs.
[1] M. A. Scarpulla, B. L. Cardozo, R. Farshchi, W. M. Hlaing Oo, M. D. McCluskey, K. M. Yu, and O. D. Dubon, Phys. Rev. Lett. 95, 207204 (2005)