Dresden 2006 – scientific programme

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MA: Magnetismus

MA 20: Poster: Films(1-36) Transp(37-56) Ex.Bias(57-67) Spindyn(68-80) Micromag(81-95) Particle(96-109) Imag.+Surface(110-113) Spinelectr(114-122) Theory+Micromag(123-131) Spinstr+Aniso(132-142) MagMat(143-156) Meas(157,158) MolMag+Kondo(159-162) Postdead(163-)

MA 20.54: Poster

Tuesday, March 28, 2006, 15:15–19:15, P1

Heusler alloy based magnetic tunnel junctions with MgO barrier — •R. Kaltofen, H. Vinzelberg, J. Schumann, D. Elefant, I. Mönch, and J. Thomas — IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany

Half-metallic Heusler alloys are expected to be promising candidates for ferromagnetic electrode materials in magnetic tunnel junctions. In this work MTJs with the stack structure Ta/Co₂Cr_0.6Fe_0.4Al/MgO_x/CoFe/ IrMn/Ta/Cu/Au were magnetron sputtered on thermally oxidized Si. The MgO_x tunnel barrier was prepared by oxidizing a Mg film using a rf wave resonance plasma beam source as well as by rf sputtering from a MgO target in an Ar/O₂-mixture. The obtained junction properties (junction resistance, magnetorestistance ratio, switching characteristics) are discussed in dependence on the preparation conditions of the Heusler electrode and the tunnel barrier, on the barrier thickness and on the annealing temperature.