Dresden 2006 – wissenschaftliches Programm
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MA: Magnetismus
MA 20: Poster: Films(1-36) Transp(37-56) Ex.Bias(57-67) Spindyn(68-80) Micromag(81-95) Particle(96-109) Imag.+Surface(110-113) Spinelectr(114-122) Theory+Micromag(123-131) Spinstr+Aniso(132-142) MagMat(143-156) Meas(157,158) MolMag+Kondo(159-162) Postdead(163-)
MA 20.62: Poster
Dienstag, 28. März 2006, 15:15–19:15, P1
Magnetization reversal in NiFe/FeMn ion irradiated patterns — •P. Candeloro1, S. Blomeier1, A. Beck1, H. Schultheiß1, H. Nembach1, B. Hillebrands1, M.O. Liedke1,2, J. Fassbender2, and B. Reuscher3 — 1Fachbereich Physik, TU Kaiserslautern, Erwin-Schrödinger-Str. 56, 67663 Kaiserslautern, Germany — 2FZ Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, 01314 Dresden, Germany — 3Institut für Oberflächen- und Schichtanalytik, Brüsseler Str. 3, 67657 Kaiserslautern, Germany
Recently ion irradiation has been proposed as a patterning tool for different magnetic systems. The increasing interest for this technique is due to the capability of tailoring the magnetic properties without affecting the sample topography. We present a study of the magnetic properties of patterns with different geometries produced by ion irradiation on a Ni81Fe19/Fe50Mn50 exchange bias bilayer by magneto-optic Kerr effect (MOKE) magnetometry and magnetic force microscopy (MFM). The hysteresis loops measured by MOKE present features evidently related to the irradiated geometries. Moreover they also reveal that the magnetization reversal is not proceeding independently in irradiated and non-irradiated areas. This magnetic coupling is confirmed by MFM images, which clearly show that magnetic domains in irradiated and non-irradiated elements are mutually influencing each other during the reversal process. Comparison with previous studies indicates that the above mentioned coupling dramatically affects the reversal process only when the lateral size of irradiated elements approaches a characteristic coupling length. This work was supported within the EC project NEXBIAS.