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MA: Magnetismus

MA 25: Spin-Electronics I

MA 25.1: Vortrag

Donnerstag, 30. März 2006, 10:15–10:30, HSZ 103

Magnetism of ultrathin GaMnAs films on GaAs — •Michal Kosuth, Svetlana Polesya, Voicu Popescu, and Hubert Ebert — Department Chemie und Biochemie / Physikalische Chemie, Universität München, Butenandstr. 5-13, D-81377 München, Germany

The electronic and magnetic properties of ultrathin GaMnAs layers on GaAs have been studied using the fully-relativistic TB-KKR band structure method. We will present results of our theoretical investigations on the dependence of the magnetic anisotropy energy on the thickness of GaMnAs film, as well as on the concentration and on the position of Mn atoms in the GaMnAs film. It is shown that, in line with previous experimental findings, the occupation of interstitial positions by Mn leads to a reduction of magnetisation and influences also the magnetic anisotropy.

In addition, we will show results on the temperature dependence of magnetic properties of these systems, that have been obtained by Monte Carlo simulations within a classical Heisenberg spin model on the basis of exchange coupling parameters, calculated using the TB-KKR Green function method.