Dresden 2006 – scientific programme

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MA: Magnetismus

MA 3: Spin-Dependent Transport Phenomena I

MA 3.11: Talk

Monday, March 27, 2006, 12:45–13:00, HSZ 103

Anisotropic magnetoresistance and spin-valve effect in all-metal mesoscopic spin-valve devices — •Alexander van Staa, Ulrich Merkt, and Guido Meier — Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Jungiusstraße 11, 20355 Hamburg

Only in a few experiments all-electrical spin injection and detection in normal metal structures has been demonstrated [1]. We investigate all-metal lateral spin-valve devices with and without tunneling barriers. The devices consist of two permalloy electrodes and an interconnecting aluminum strip. The micromagnetic behavior of the device has been imaged with a magnetic-force microscope in external magnetic fields at room temperature. During a single cooling cycle at temperatures between 2 and 120 K we have measured the anisotropic magnetoresistance of both electrodes and the magnetoresistance of the entire device. In the latter we can clearly identify the contributions of the anisotropic magnetoresistance and the mesoscopic spin-valve effect [2].

[1] F.J. Jedema, M.S. Nijboer, A.T. Filip, and B.J. van Wees, Phys. Rev. B 67, 085319 (2003).

[2] A. van Staa, C.M.S. Johnas, U. Merkt, and G. Meier, Superlatt. Microstruct. 37, 349 (2005); A. van Staa and G. Meier, submitted (2005).