Dresden 2006 – scientific programme

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MM: Metall- und Materialphysik

MM 25: Poster Session

MM 25.1: Poster

Wednesday, March 29, 2006, 15:30–17:30, P4

IMPROVED PLANAR HOMOGENEITY OF MULTICRYSTALLINE SOLAR SILICON — •Andrey Sarikov, Vladimir Litovchenko, Anatoly Evtukh, and Vitaly Kostylyov — V. Lashkarev Institute of Semiconductor Physics NASU, 45 Nauki avenue, Kiev 03028, Ukraine

In this work, the influence of the gettering treatment by the combined getter of Al deposited on Si with developed surface on the distribution of diffusion length of minority charge carriers in multicrystalline silicon has been investigated. For the calculation of the parameters of diffusion length distribution, a new method has been proposed based on the mathematical treatment of experimentally measured integrated spectra of surface photovoltage measured by capacitor method (capacitor photovoltage).

The investigation carried out has demonstrated that the gettering treatments of multicrystalline Si samples lead to the increase of the homogeneity of the diffusion length of minority charge carriers, together with the increase of its average value. The distributions of the diffusion length in multicrystalline silicon can be well described by the normal distributions.

The proposed method allows resource-saving calculations of the parameters of the distributions of minority carrier diffusion length in inhomogeneous materials based on the analysis of integrated spectral dependences of capacitor photovoltage.