Dresden 2006 – scientific programme

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MM: Metall- und Materialphysik

MM 30: Symposium Nano Wires (SYNW)

MM 30.6: Talk

Thursday, March 30, 2006, 12:15–12:30, IFW D

Properties of simple metal nanowire devices fabricated by thin film fracture — •Rainer Adelung, Seid Jebril, Mady Elbahri, and Dadichi Paretkar — Christian Albrechts Universitaet Kiel

It turned out that a thin film fracture based method [1] is well suitable to integrate nanowires into microstructures [2]. Nanowires exhibit a pronounced sensitivity to a change of chemical surrounding [3,4]. This effect can be based on two different principles. If a nanowire contains nanogaps, molecules with an affinity to the nanowire material cover these gaps. Typically, the conductivity of such a host guest structure is increased as the filled gaps assist the hopping transport. Contrary, it was shown that very thin nanowires without gaps show a decrease of conductivity if exposed to molecules. This is explained with a reduction of conducting electrons by localization at the chemical bond between molecule and wire. The electrical properties of nanowire devices fabricated with the thin film fracture approach will be presented. Changes in conductivity after exposure to different chemical species will be discussed. Those will be related with the structure of the nanowires and the device geometry. [1] R. Adelung et al. Nat. mater., 3, 375, (2004). [2] Pat. Nr. PCT/DE 2005/001852, (2005). [3] F. Patolsky and C. M. Lieber, Materials today, April (2005). [4] T. Hassenkam et al. , Nano Lett. 4, 19 (2004).