Dresden 2006 – scientific programme
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O: Oberflächenphysik
O 10: Semiconductor surfaces and interfaces
O 10.5: Talk
Monday, March 27, 2006, 16:00–16:15, PHY C213
Investigation of the System Hafnium/Silicon(100) by means of XPS and X-ray Photoelectron Diffraction (XPD) — •C. Fluechter1,2, D. Weier1,2, S. Dreiner1, M. Schürmann1, U. Berges1,2, M.F. Carazzolne3, A. de Siervo3,4, R. Landers3,4, G.G. Kleiman4, C. Westphal1,2, and E. Henschel1 — 1Experimentelle Physik 1 - Universität Dortmund, Otto-Hahn-Str.4, D 44221 Dortmund, Germany — 2DELTA - Universität Dortmund, Maria-Göppert-Meier-Str. 2, D 44227 Dortmund, Germany — 3Laboratório Nacional de Luz Sincrotron, C.P. 6192, 13084-971 Campinas, SP, Brazil — 4Instituto de Fisica - Universidade Estadual de Campinas, C.P. 6165, 13083-970 Campinas, SP, Brazil
The ongoing miniaturization of transistor devices in the semiconductor industry calls for a new gate dielectric, replacing silicon oxide (SiO2) that has been used for decades. One of the candidates, i.e. hafnium oxide (HfO2), is investigated in this work by studying ultrathin films of the pre system HfSi/Si(100) via XPS, LEED and Photoelectron Diffraction with a magnesium x-ray source. Several heating curves are presented showing that, unlike for thick layers, no phase transitions of the ordered HfSi films can be observed. Also, an island formation of the annealed film is indicated. Simulations of the structure of the system are shown and compared to experimental diffraction pattterns. We propose a possible interface structure for Hf/Si(100) to bulk Si. Finally, possibilities for oxidizing and transforming the prepared HfSi into HfO2 are introduced.