Dresden 2006 – scientific programme
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O: Oberflächenphysik
O 10: Semiconductor surfaces and interfaces
O 10.9: Talk
Monday, March 27, 2006, 17:00–17:15, PHY C213
MOMBE growth of ZnO on SiC - a photoemission study — •Stefan Andres1, Christian Pettenkofer1, and Thomas Seyller2 — 1Hahn-Meitner-Institut, Glienicker Str. 100,D-14109 Berlin, Germany — 2Institut of Technical Physics, University of Erlangen, Erwin-Rommel-Str. 1, D-91058 Erlangen, Germany
Zinc oxide (ZnO) is a semiconductor with a direct band gap of 3.3eV and therefore an interesting candidate for future applications in the area of opto-electronics in the UV regime or transparent electronics.
We report on the growth of thin ZnO films on 6H-SiC(0001) substrates. The films were grown using Metal Organic Molecular Beam Epitaxy (MOMBE). Changes in surface morphology and electronic structure during film growth were investigated by low energy electron diffraction (LEED) and photoelectron spectroscopy (PES), respectively. The qualitative LEED images show that highly oriented ZnO(0001) films are formed. However, facceting of the surface is observed during the initial stages of ZnO growth and also beyond the monolayer coverage. A careful quantitative and qualitative examination of the SiC and ZnO core and valence band levels reveals the growth mode to be of the Frank v.d. Merwe type. Furthermore, we will comment on the the band alignment of the SiC/ZnO interface.