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O: Oberflächenphysik

O 11: Epitaxy and growth I

O 11.3: Vortrag

Montag, 27. März 2006, 15:30–15:45, WIL A317

Initial growth of Cu islands on Cu(100) by pulsed laser deposition — •Andreas Dobler and Thomas Fauster — Lehrstuhl für Festkörperphysik, Universität Erlangen, Staudtstr. 7, D-91058 Erlangen

We investigated the initial growth of Cu islands on a Cu(100) surface for coverages below 0.3 monolayers with scanning tunneling microscopy. According to nucleation theory, the island density increases with the deposition flux F proportional to F^i/i+2. For thermal deposition at room temperature the critical nucleus i is about three atoms. Although the instantaneous flux of pulsed laser deposition is about 10⁴ times higher than in the case of thermal deposition, the island density is of the same order of magnitude for both deposition methods. When the flux is increased due to higher laser intensity, the number of islands decreases which cannot be explained by nucleation theory.