Dresden 2006 – scientific programme
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O: Oberflächenphysik
O 14: Poster session I (Adsorption, Epitaxy and growth, Phase transitions, Surface reactions, Organic films, Electronic structure, Methods) (sponsored by Omicron Nanotechnology GmbH)
O 14.26: Poster
Monday, March 27, 2006, 18:00–21:00, P2
GIXRD and XRR Studies on Semiconductor Insulator Multilayers — •T. Weisemöller1, C. Deiter1, A. Gerdes2, B. H. Müller3, C. R. Wang3, K. R. Hofmann3, and J. Wollschläger1 — 1Fachbereich Physik, Universität Osnabrück, D-49069 Osnabrück — 2Institut für Festkörperphysik, Universität Hannover, D-30167 Hannover — 3Institut für Halbleiterbauelemente und Werkstoffe, Universität Hannover, D-30167 Hannover
Reducing the size of electronic structures to the nanometer regime it is necessary to grow atomic thin and flat epitaxial films of semiconductors and insulators. Here, CaF2 and Si are good candidates because of their lattice matched laminar growth. The additional deposition of silicon and germanium at room temperature with successive heating with and without flux of a surfactant material (Sb and B) was investigated by means of grazing incidence x-ray diffraction (GIXRD), x-ray reflectivity (XRR) and atomic force microscopy (AFM). Annealing 10nm thick silicon films up to 630oC under boron atmosphere provides semiconductor layers of the highest quality (roughness <0.34nm).