Dresden 2006 – scientific programme
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O: Oberflächenphysik
O 14: Poster session I (Adsorption, Epitaxy and growth, Phase transitions, Surface reactions, Organic films, Electronic structure, Methods) (sponsored by Omicron Nanotechnology GmbH)
O 14.51: Poster
Monday, March 27, 2006, 18:00–21:00, P2
Structure and morphology of organic films of PTCDI-C8 on silicon dioxide — •Tobias Krauss1, Esther Barrena1,2, and Helmut Dosch1,2 — 1Max-Planck-Institut für Metallforschung, Heisenbergstrasse 3, 70569 Stuttgart, Germany — 2Institut für Theoretische und Angewandte Physik, Universität Stuttgart, 70550 Stuttgart, Germany
Since it has been proved that the charge transport within semiconductor organic films is strongly dependent on their morphology and structural order, their controlled ordered growth is a primary task to optimize the organic film electrical and optical properties. Here we focus on thin films of an n-type organic semiconductor, PTCDI-C8 (N,N*-dioctyl-3,4,9,10-perylene tetracarboxylic diimide), deposited on SiO2/Si by organic molecular beam epitaxy (OMBE) in ultra-high vacuum (UHV). We show that PTCDI-C8 forms extraordinary well-ordered films of standing molecules. By combining x-ray diffraction studies and Atomic Force Microscopy (AFM) we present results on the structure (perpendicular and parallel to the film surface) and morphology as a function of the substrate temperature.