Dresden 2006 – wissenschaftliches Programm
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O: Oberflächenphysik
O 14: Poster session I (Adsorption, Epitaxy and growth, Phase transitions, Surface reactions, Organic films, Electronic structure, Methods) (sponsored by Omicron Nanotechnology GmbH)
O 14.61: Poster
Montag, 27. März 2006, 18:00–21:00, P2
One-Dimensional Electronic Structure of Gd chains on Si(111) — •K.M. Döbrich1, J.L. McChesney2, E. Rotenberg2, G. Kaindl1, F.J. Himpsel3, and K. Starke1 — 1Fachbereich Physik, Freie Universität Berlin — 2Advanced Light Source, Lawrence Berkeley National Laboratory, U.S.A. — 3Department of Physics, University of Wisconsin Madison, U.S.A.
Confining the propagation of electrons to one dimension leads to dramatically different band structures compared to those found in bulk crystals. Decorating a surface with a sub-monolayer amount of material is a natural approach for creating 1D structures. For some cases, e.g. Au on Si(111), the formation of atomic chains was reported. Recently, Gd was observed to induce a chain-like 5×2 reconstruction of the Si(111) surface [1], similar to Au. In contrast to the non-magnetic systems investigated before, Gd provides a large magnetic moment of 7µB per atom. One-dimensional Gd-induced bands were observed by angle-resolved photoemission spectroscopy (ARPES) in the Si bandgap [2].
In the present work, Si(111)5×2Gd was studied by ARPES using synchrotron radiation at beamline 7.0.1 of the Advanced Light Source. We have investigated a wide range of k-space which allows us to distinguish between features of the electronic structure of Si(111)5×2Gd, Si(111)√3×√3-R30-Gd and Si(111)7x7.
[1] A. Kirakosian et al., Surf. Sci. 498, L109 (2002).
[2] T. Okuda et al., J. Electron Spectrosc. Relat. Phenom. 137-140, 125 (2004).