Dresden 2006 – scientific programme
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O: Oberflächenphysik
O 14: Poster session I (Adsorption, Epitaxy and growth, Phase transitions, Surface reactions, Organic films, Electronic structure, Methods) (sponsored by Omicron Nanotechnology GmbH)
O 14.70: Poster
Monday, March 27, 2006, 18:00–21:00, P2
Slow electron backscattering spectroscopy as a technique for studies of electronic energy structure of semiconductors — •L.A. Kizman1, T.Yu. Popik1, V.M. Feyer2, O.B. Shpenik1, and Yu.V. Popik3 — 1Institute of Electron Physics, Ukr. Nat. Acad. Sci., Uzhhorod, Ukraine — 2CNR-IMIP, Area della Ricerca di Roma 1, CP10,I-00016 Monterotondo Scalo, Italy — 3Uzhhorod National University, Uzhhorod, Ukraine
Using the technique of slow (0-5 eV) monoenergetic (~30 meV) electron backscattering spectroscopy, the processes of excitation of surface and bulk electron states of Si, Ge, and GaAs surfaces of various modifications. The effect of treatment, crystal orientation and chemical purity of the surface on the processes of elastic and inelastic scattering of slow monoenergetic electrons is revealed. The energy dependences of the intensity of the scattered low-energy electrons and characterisctic loss spectra at various incident electron energies are studied for the semiconductors under investigation. The slow electron elastic and inelastic backscattering spectra are shown to be very sensitive to the surface condition and their fine structure results from the excitation of surface and bulk electron states.