Dresden 2006 – scientific programme
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O: Oberflächenphysik
O 14: Poster session I (Adsorption, Epitaxy and growth, Phase transitions, Surface reactions, Organic films, Electronic structure, Methods) (sponsored by Omicron Nanotechnology GmbH)
O 14.79: Poster
Monday, March 27, 2006, 18:00–21:00, P2
Single-Shot Infrared Ellipsometry with a Free Electron Laser and its potential applications — •Michael Gensch1, Jongseok Lee2, Karsten Hinrichs1, Norbert Esser1, Wolfgang Seidel3, Arnulf Röseler1, and Ullrich Schade2 — 1ISAS - Institute for Analytical Sciences, Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin, Germany — 2Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung mbH, Albert-Einstein-Str. 15, 12489 Berlin, Germany — 3Research Center Rossendorf, Institute of Nuclear and Hadron Physics, Bautzner Landstraße 128, 01328 Dresden, Germany
In this contribution, a novel division of amplitude polarimeter (DOAP) approach for single-shot infrared ellipsometry with a free electron laser source is presented. The set-up enables the simultaneous determination of the ellipsometric parameters by determining two ratios of intensities so that variations of the pulse power essentially do not affect the measurement. The present set-up utilizes electrical lock-in technique to the macro pulse structure of the FEL. In a first beam time awarded in autumn 2005, we determined successfully the optical response of thin polymeric films on silicon. Thus, we establish the proof-of-principle and the precision of the instrument. The high brilliance of the FEL combined with the DOAP principle gives unique opportunities for e.g. micro-focus, imaging or pump-probe ellipsometry as well as mapping ellipsometry of ultra thin films.