O 20: Epitaxy and growth II
Dienstag, 28. März 2006, 11:15–13:00, WIL B321
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11:15 |
O 20.1 |
In-situ diffraction studies of homoepitaxial electrochemical growth on Au(100) — •Klaus Krug, Jochim Stettner, and Olaf M. Magnussen
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11:30 |
O 20.2 |
surface Debye Temperatur of thin Bi(111) on Si(001) — •Rabih Khanafer, Andreas Janzen, Boris Krenzer, Giriraj Jnawali, Hichem Hattab, and Michael Horn-von Högen
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11:45 |
O 20.3 |
Epitaxial growth of Bi(111) on Si(001) studied by SPA-LEED: Morphology and Lattice Accomodation — •Giriraj Jnawali, Hichem Hattab, Boris Krenzer, and Michael Horn von Hoegen
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12:00 |
O 20.4 |
Epitaxial growth of thin Fe-films on GaAs(110) at 80K — •L. Winking, M. Wenderoth, J. Homoth, and R. G. Ulbrich
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12:15 |
O 20.5 |
Influence of strain on the dynamics of III – V semiconductor surfaces — •Hannes Guhl and Frank Grosse
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12:30 |
O 20.6 |
Kinetic roughening during polymer film growth: Monte-Carlo simulations and experiments — •Christian Vree, Johanna Röder, Hans-Ulrich Krebs, and S. G. Mayr
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12:45 |
O 20.7 |
Optical in situ monitoring of deoxidation of III-V-semiconductors in MOVPE — •A. Oestereich, C. Kaspari, M. Pristovsek, and W. Richter
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