Dresden 2006 – wissenschaftliches Programm

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O: Oberflächenphysik

O 29: Poster session II (Nanostructures, Magnetism, Particles and clusters, Scanning probe techniques, Time-resolved spectroscopy, Structure and dynamics, Semiconductor surfaces and interfaces, Oxides and insulators, Solid-liquid interfaces)

O 29.33: Poster

Mittwoch, 29. März 2006, 14:30–17:30, P2

Two dimensional dopant profiling of semiconductor microdevices with high spatial resolution using High Speed Scanning Capacitance Spectroscopy — •Martin von Sprekelsen and Roland Wiesendanger — University of Hamburg, Institute of Applied Physics and Microstructure Research Center, Jungiusstrasse 11, D-20355 Hamburg, Germany

For the analysis of semiconductor devices tools with high spatial resolution down to the nanometer scale become increasingly important. Scanning capacitance microscopy (SCM) is an established method to obtain 2D-dopant profiles of charge carrier concentrations. These profiles are usually taken at a constant bias voltage (Vbias).

Howewer unavoidable side effects such as mobile surface charges or the strong influence of Vbias on the SCM profiles are limiting factors for the spatial resolution of SCM. To overcome these restrictions we modulate the Vbias voltage at a frequency in the kHz-range. The modulated electric field virtually traps mobile surface charges. We use High Speed Scanning Capacitance Spectroscopy (HSSCS) to obtain capacitance spectra for Vbias, by which we can analytically get rid of the influence of Vbias.

The method can be used on Si- and III-V-semiconductors. On ultra-shallow junctions on Si-semiconductor samples a high spatial resolution down to 10 nm can be achieved. Examples of practical applications of HSSCS will be shown.