Dresden 2006 – scientific programme
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O: Oberflächenphysik
O 29: Poster session II (Nanostructures, Magnetism, Particles and clusters, Scanning probe techniques, Time-resolved spectroscopy, Structure and dynamics, Semiconductor surfaces and interfaces, Oxides and insulators, Solid-liquid interfaces)
O 29.42: Poster
Wednesday, March 29, 2006, 14:30–17:30, P2
Near-field-optical investigation of surface plasmons in metal-insulator-semiconductor tunnel junctions — •Tino Göhler1, Jan Seidel1, Stefan Grafström1, Lukas Eng1, Boris Chichkov2, and Alain Dereux3 — 1Institut für Angewandte Photophysik, TU Dresden, George-Bähr-Str. 1, 01069 Dresden, Germany — 2Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover, Germany — 3Laboratoire de Physique de l’Université de Bourgogne, UMR CNRS 5027, 9 avenue Alain Savary, Boîte Postale 47870, F-21078 Dijon, France
In layered metal-insulator-semiconductor (MIS) structures electrons can excite surface plasmon (SP) oscillations in the metal layer via inelastic tunnelling [1]. In our experiments these structures consist of a silicon substrate covered by a thin oxide layer onto which a top metal electrode is deposited. This type of structure supports different SP modes for which the electromagnetic field is concentrated to different interfaces, namely the top metal-air interface and the bottom metal-oxide interface. SP excitation in the gap is supposed to be quite efficient with the inelastic tunnelling rate reaching ∼ 10% of the elastic rate. Therefore, such MIS structures appear highly attractive as electrically pumped plasmon sources for integrated optoelectronic devices. We report here on SP emission directly investigated by scanning near-field optical microscopy (SNOM). Emphasis is placed on spectral characteristics of SPs in defined structures and at metal electrode edges.
[1] McCarthy, S. L., Lambe, J., Appl. Phys. Lett. 33, 858 (1978)