Dresden 2006 – scientific programme

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O: Oberflächenphysik

O 29: Poster session II (Nanostructures, Magnetism, Particles and clusters, Scanning probe techniques, Time-resolved spectroscopy, Structure and dynamics, Semiconductor surfaces and interfaces, Oxides and insulators, Solid-liquid interfaces)

O 29.64: Poster

Wednesday, March 29, 2006, 14:30–17:30, P2

STM-investigations of metal films near the percolation threshold on GaAs(110) — •J. Homoth, M. Wenderoth, T. Druga, L. Winking, and R. G. Ulbrich — IV. Physikalisches Institut der Universität Göttingen, Friedrich-Hund Platz 1, 37077 Göttingen

The resistance of thin Ag and Cu films on insulating GaAs(110) was measured in-situ during UHV deposition at different sample temperatures (80K - 300K). The onset of conductance is seen in the thickness range of d=2 monatomic layers (ML). At thicknesses of more than 2ML an increase of conductance as a function of d with a power law behaviour of an exponent grater 1 is found.

We present scanning tunnelling topographies of films near the percolation thickness. The overall film morphology resembles a 3D cluster growth. Spatially resolved scanning tunnelling spectroscopy reveals additional states in the band gap region of the clean GaAs(110) surface. The additional states are localised around the metal clusters with a lateral decay length of less than 5 Angstroms.

The work was financially supported by the SFB 602 TP A7.