Dresden 2006 – scientific programme

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O: Oberflächenphysik

O 35: Organic films III

O 35.3: Talk

Thursday, March 30, 2006, 11:45–12:00, WIL B321

Transition from layer-by-layer to rapid kinetic roughening in organic semiconductor DIP films on SiO₂ — •Xue Na Zhang¹, Esther Barrena², and Helmut Dosch^1,2 — ¹Max-Planck-Institut für Metallforschung, Heisenbergstrasse 3, 70569 Stuttgart, Germany — ²Institut für Theoretische und Angewandte Physik, Universität Stuttgart, 70550 Stuttgart, Germany

Over the past two decades, organic semiconductors have widely investigated, due to their exciting optical, electronic, and optoelectronic properties. Recently, thin films of diindenoperylene (DIP) have been studied showing an extraordinarily high structural order on silicon dioxide making this molecule a prospective candidate for application in electronic devices [1][2]. Here we present a study of the structure and growth in the early stages of the DIP film formation on SiO₂ by Atomic Force Microscope and in-situ x-ray diffraction. We show that a transition from perfect layer-by-layer to rapid kinetic roughening occurs at a critical thickness of about 4-5 ML. In addition, our results reveal that significant changes in the lateral structure take place during these first stages of the DIP growth. Different aspects of the growth are discussed in relationship with the observed structural data.

[1]A.C. Dürr, et al. Applied Physics Letters 81, 2267 (2002).

[2]A.C. Dürr, et al. Physical Review Letters 90, 016104 (2003).