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O: Oberflächenphysik

O 39: Nanostructures III

O 39.5: Vortrag

Donnerstag, 30. März 2006, 16:00–16:15, PHY C213

New methods to determine the sputtering yield at step edges — •Alex Redinger, Henri Hansen, and Thomas Michely — I. Physikalisches Institut, RWTH Aachen University, 52056 Aachen, Germany

STM investigations on pattern formation at grazing incidence ion bombardment are used to determine the sputtering yield at step edges. A Pt(111) crystal is bombarded with 5 keV Ar⁺ ions at angles of incidence between 79^∘ and 86^∘ to the surface normal. A series of experiments at 83^∘ and 550K sample temperature is used to determine the amount of removed material as a function of ion fluence. Relating for this series the number of ascending steps with the removed amounts allows to establish the sputtering yield at acending steps.
At 86^∘ ion incidence and 550K sample temperature the step edge motion of prexisting steps due to ion bombardment is used to determine the step edge velocity. By taking into account the damage created by ion bombardment below the surface we could again determine the sputtering yield at an acending step edge. Both methods leed to simular results an are in good agreement with earlier experiments and MD simulations [1].

[1] Hansen et al. PRL 92, 246106 (2004)