Dresden 2006 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
O: Oberflächenphysik
O 39: Nanostructures III
O 39.9: Talk
Thursday, March 30, 2006, 17:00–17:15, PHY C213
Influence of STM measurements during MOVPE — •Bert Rähmer1, Markus Pristovsek1, Raimund Kremzow1, Markus Breusing2, and Wolfgang Richter2 — 1TU-Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin — 2Università degli Studi di Roma "Tor Vergata", Via della Ricerca Scientifica 1, 00133 Roma, Italy
We developed a Scanning Tunnelling Microscopy (STM) and its deviate Atomic Force Microscopy (AFM) that measures in-situ the surface topography in real time and real space with high spatial resolution during Metal-Organic Vapour Pressure Epitaxy (MOVPE) growth. The set-up of STM is simpler for good resolution. AFM has the advantage, to be able to measure also on semi-isolating substrates like sapphire. Last year we described the set-up and presented first measurements of a step-bunched GaAs sample at 500 ∘C. Additionally we showed measurements with the in-situ STM during the growth of InAs quantumdots on GaAs, which show different growth regions in the proximity on the scanning region. We measured the sample ex-situ with a Atomic Force Microscope (AFM), with Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray Diffraction (EDX). The origin of different areas is a temperature reduction by the STM tip. This can be compensating by adjusting the growth conditions accordingly.