Dresden 2006 – scientific programme
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O: Oberflächenphysik
O 40: Oxides and insulators
O 40.5: Talk
Thursday, March 30, 2006, 16:00–16:15, WIL A317
Structural investigation of the ultra-thin gallium oxide grown on the CoGa(100) surface — •Alina Vlad1, Andreas Stierle1, Reinhard Streitel1, Georg Kresse2, Martijn Marsman2, and Helmut Dosch1 — 1Max-Planck Institut für Metallforschung, Heisenbergstraße 1, 70569 Stuttgart — 2Institut für Materialphysik and Centre for Computational Materials Science, Universität Wien, A-1090 Wien, Austria
Understanding the oxidation of metallic alloy surfaces is not only of fundamental interest, but is also a important for industrial applications in sectors like heterogeneous catalysis, microelectronics, high-density data storage technologies. Beside having the desired properties, one of the requirements for practical applications is that the oxide layer should be reproducible in thickness and composition. Also, a detailed knowledge of the structural aspects is often important. The formation of a well-ordered ultra thin surface gallium oxide was previously observed when exposing the CoGa(100) surface at 450oC and an oxygen pressure of 5 · 10−7 mbar. The aim of this study was to determine the structure of the oxide film by means of Surface X-ray Diffraction (SXRD) and DFT calculations. The set of experimental data (surface rods and CTR’s) were measured at the ID32 beamline at ESRF, Grenoble. A trilayer O-Ga-O model for the surface oxide is proposed. The overall stoichiometry of the film does not correspond to that of the stable bulk β-Ga2O3 but it is Ga2O.