Dresden 2006 – scientific programme
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O: Oberflächenphysik
O 49: Electronic structure IV
O 49.5: Talk
Friday, March 31, 2006, 12:15–12:30, WIL B321
Electronic structure of ZnO(1120) single crystals and thin films — •Stefan Andres1, Christian Pettenkofer1, Wolfgang Bremsteller1, and Leonard Broekman2 — 1Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany — 2Department of Physics, La Trobe University, VIC, 3086, Australia
Zinc oxide (ZnO) is a transparent semiconductor with a direct band gap of about 3.3eV. This makes ZnO an interesting candidate for future applications in transparent electronics and UV-light emission. In order to develop such devices a detailed understanding of the band structure of ZnO is neccessary.
However, until now angle resolved photoemission spectroscopy (ARPES) studies on ZnO focussed only on the highly symmetric (0001), (0001) and (1010) surfaces. We present comparative ARPES results from ZnO(1120) single crystals and MOMBE grown thin films, recorded at the TGM7 beamline at BESSY II synchrotron light facility in Berlin. The spectra clearly show energy dispersions of the occupied valence states as a function of the wave vector both perpendicular and parallel to the surface. Our results are discussed along with band structure calculations.