O 5: Electronic structure I
Montag, 27. März 2006, 11:15–13:00, WIL A317
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11:15 |
O 5.1 |
Probing of bulk band edges by STM: An ab initio analysis — •Alexey Dick and Jörg Neugebauer
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11:30 |
O 5.2 |
Stark-Effect in STM induced Light Emission — •Germar Hoffmann, Peter Johansson, and Richard Berndt
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11:45 |
O 5.3 |
Electronic structure of the 6H-SiC(1120) non-polar surface — •Marco Bertelli, Jan Homoth, Martin Wenderoth, Rainer G. Ulbrich, Angela Rizzi, M. Clelia Righi, and Alessandra Catellani
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12:00 |
O 5.4 |
Neutral phosphorus atoms in Si(111)-2×1 stabilize local buckling of π-bonded chains — •J. K. Garleff, M. Wenderoth, R. G. Ulbrich, C. Sürgers, H. v. Löhneysen, and M. Rohlfing
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12:15 |
O 5.5 |
Visualization of the Molecular Jahn-Teller effect in an insulating K4C60 Monolayer — •Andre Wachowiak, R. Yamachika, K. H. Khoo, Y. Wang, M. Grobis, D.-H. Lee, Steven G. Louie, and M. F. Crommie
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12:30 |
O 5.6 |
Scanning Tunneling Microscopy (STM) and Spectroscopy (STS) Investigation of Ultra-thin Epitaxial Nobel Metal Films on Sapphire — •Christof Dietrich, Berndt Koslowski, Gerd Kästle, Hans-Gerd Boyen, and Paul Ziemann
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12:45 |
O 5.7 |
STM study of subsurface impurities in noble metals — •A. Weismann, M. Wenderoth, N. Quaas, and R. G. Ulbrich
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