Dresden 2006 – scientific programme
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VA: Vakuumphysik und Vakuumtechnik
VA 2: Surfaces, instruments and systems
VA 2.1: Talk
Monday, March 27, 2006, 10:40–11:00, HSZ 101
Preparation of Heusler alloys – Evaporation chamber design and results — •Andreas Volland and Christian Heyn — Institut für Angewandte Physik, Universität Hamburg, Jungiusstraße 11, 20355 Hamburg
One major challenge for the development of hybrid spintronic devices is the injection of spin-polarized electrons through the interface between the semiconductor material and the metallic ferromagnet. We grow InGaAs based high electron mobility heterostructures with solid-source molecular beam epitaxy. In order to avoid oxidation and contamination of the interface layer between semiconductor heterostructure and ferromagnetic metal contact, it is essential to install the metallization chamber at the vacuum system of the semiconductor growth chamber. In this presentation we show technological aspects of our growth system and first results of Heusler alloy Ni2MnIn deposition on GaAs and InGaAs surfaces.