Frankfurt 2006 – scientific programme
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A: Atomphysik
A 9: Poster I: Ultrakalte Atome und BEC
A 9.15: Poster
Tuesday, March 14, 2006, 16:30–18:30, Labsaal
Networking surface-electrode ion traps for large-scale QIP* — •R. Reichle1, S. Seidelin1, J. Chiaverini2, R.B. Blakestad1, J.J. Bollinger1, J. Britton1, R. Epstein1, D. Hume1, W.M. Itano1, J.D. Jost1, E. Knill1, C. Langer1, D. Leibfried1, R. Ozeri1, J. Wesenberg1, and D.J. Wineland1 — 1NIST, Time and Frequency Division, Boulder, CO 80305 — 2Los Alamos National Laboratory, NM 87545
We discuss how surface-electrode ion traps, i.e., planar miniaturized Paul traps where all electrodes reside in a single plane and ions reside above the plane, have many advantages over their multilayer variants for large scale trapped-ion quantum computing. In addition to their relatively simple manufacturing by standard microfabrication techniques, we consider some issues that make them preferable for their use in large scale structures. In the proposed multiplexing versions for large scale ion trap architectures, nodal points are required. These nodes serve as junctions for the ion qubits, to reliably and arbitrarily transfer quantum information from one location to another in the two planar dimensions. We propose optimized geometric layouts for these nodal points that allow for simple concatenation to a multiplexed architecture. High-fidelity simulations show that the proposed layouts are capable of reliably shuttling ion qubits between these elementary units. More explicitly, we identify problems that might arise in the realization of the nodal points and show how they can be eliminated. We provide accurate analytical models for surface-electrode ion traps for characterizing their global behavior, discuss design issues to avoid sites of anti-binding, introduce electrode shapes to smooth the transport characteristics near nodal points, and present ideas to compensate for micromotion in surface-electrode traps. Comparisons between simulations and preliminary experimental data are consistent to within a few percent.
*Supported by DTO and NIST.