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Frankfurt 2006 – scientific programme

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Q: Quantenoptik und Photonik

Q 35: Poster Photonische Kristalle

Q 35.11: Poster

Tuesday, March 14, 2006, 16:30–18:30, Labsaal

Plasmonic metal-semiconductor-metal photodetectors — •Jurana Hetterich1, Ulf Geyer1, Georg Bastian1, Gero von Plessen2, and Sergei G. Tikhodeev31Lichttechnisches Institut, Universität Karlsruhe, Kaiserstr. 12, 76131 Karlsruhe, Germany — 2I. Physikalisches Institut, RWTH Aachen, 52056 Aachen, Germany — 3A .M. Prokhorov General Physics Institute RAS,Vavilova 38, Moscow 119991, Russia

We have investigated the interplay of plasmonic field enhancement and semiconductor absorption in planar metallic photonic crystals consisting of periodically patterned gold and silver deposited on GaAs/GaInNAs heterostructures. Our goal is to exploit the resulting resonance effects to fabricate a novel class of fast metal-semiconductor-metal (MSM) photodetectors. We have established a new technique for the fabrication of metallic electrodes with dimensions below 100 nm, which are expected to perform two tasks: First, surface plasmon polaritons improve the light transmission through the metal layer, and the local field enhancement associated with these excitations increases the optical absorption in the semiconductor. Second, optically generated electrons and holes are rapidly extracted into the metallic electrodes like in conventional MSM photodetectors. We present theoretical calculations based on the scattering matrix approach and compare the results with experimental spectral and dynamical properties. The resulting ultimate limits of quantum efficiency and bandwidth depending on the absorption properties, RC-times and carrier transit times will be discussed.

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