Düsseldorf 2007 – wissenschaftliches Programm

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Q: Fachverband Quantenoptik und Photonik

Q 43: Optische Messtechnik

Q 43.5: Vortrag

Mittwoch, 21. März 2007, 15:00–15:15, 5E

Imaging of npn diodes by scanning near-field infrared microscopy — •Jean-Sébastien Samson, Götz Wollny, Erik Brundermann, and Martina Havenith — Ruhr-Universität-Bochum, Physikalische Chemie 2, NC 7/72, 44780 Bochum

We report on the scanning near-field infrared microscopy studies of doped silicon. We are able to obtain measurement of the refraction index of the investigated materials with a lateral resolution which is far beyond the diffraction limit. The results show that the the index of refraction depend on the doping of the material. This can be use to image and characterize the surface structure. The measurement were carried out on implanted Phosphore Galliu, and Copper nanostructure. The methode as a high potential for imaging and characterization of the space charge zone