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Q: Fachverband Quantenoptik und Photonik

Q 9: Halbleiterlaser

Q 9.1: Vortrag

Montag, 19. März 2007, 14:30–14:45, 5K

Passively mode-locked semiconductor disk laser with graded and step indices — •Florian Saas¹, Günter Steinmeyer¹, Uwe Griebner¹, Martin Zorn², and Markus Weyers² — ¹Max-Born-Institut, Max-Born-Strasse 2a, D-12489 Berlin, Germany — ²Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str.4, D-12489 Berlin, Germany

We report generation of sub-picosecond pulses with an optically-pumped semiconductor disk laser (SCDL), passively mode-locked by a semiconductor saturable absorber (SAM). For this purpose, we investigate different InGaAs-QW-gain structures, both, based on step index (STIN) and graded index (GRIN) [1] designs. Pulses with durations as short as 590 fs and 2.9 ps were achieved, respectively. The mode-locked SCDLs were diode-pumped at 800 nm and delivered about 30 mW of output power. The emission was centered at a wavelength of 1040 nm, and the repetition rate amounted to 3 GHz for both laser oscillators. The dispersion characteristics of the utilized semiconductor structures were calculated and measured, and their influence on the pulse generation is discussed. Furthermore, we quantitatively characterized spectral tuning of the exciton resonance of the InGaAs-QW SAM, exploiting the AC-Stark-effect for quasi-instantaneous pulse shaping.

[1] F. Saas et al., Appl. Phys. Lett. 89, 151120 (2006).