Heidelberg 2007 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 214: Halbleiterdetektoren I
T 214.6: Vortrag
Dienstag, 6. März 2007, 18:05–18:20, INF 327 SR 6
3D active edge silicon sensor testbeam studies — •Jaap Velthuis1, M. Mathes1, C. DaVia2, S. Parker3, L. Reuen1, J. Hasi2, S. Watts2, K. Einsweiler4, M. Garcia-Sciveres4, M. Ruspa5, H. Krüger1, and N. Wermes1 — 1Physikalisches Institut, Universität Bonn, Bonn — 2Brunel University, Uxbridge, United Kingdom — 3University of Hawaii, Honolulu, Hawaii, U.S.A. — 4Lawrence Berkeley Laboratory, Berkeley, U.S.A. — 5University of Torino
At a particle flux of $10^{15}n_{eq}cm^{-2}$, as will be already reached for the innermost layers of the LHC detectors, current silicon sensors reach the limits of their radiation hardness. At sLHC the radiation dose will increase by at least one order of magnitude. At these doses it becomes impossible to fully deplete the sensors. Since only the depleted part contributes to signal generation, the devices sieze to operate.
One possible solution are 3D detectors. Here the collecting diodes are not on top of the detector, but are grown into the bulk. This results in short electrodes that are at very small distances. Therefore, the depletion voltage becomes very low, allowing full depletion even at very high fluences, and the charge collection becomes very fast, while still taking advantage of the full 300~$\mu m$ thickness of the silicon.
3D detectors with different electrode topologies were operated in a high energy particle beam at CERN. Results of these tests will be presented.