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T: Fachverband Teilchenphysik

T 403: Halbleiterdetektoren III

T 403.9: Talk

Thursday, March 8, 2007, 18:45–19:00, KIP Gr. HS

Strahlungseffect on MOS-C and MOS-Depfet — •Qingyu Wei — Max-Planck-Institute Halbleiter labor, Muenchen, Deutschland

we present the radiation effect on two different semiconductor devices, MOS-C and MOS-Depfet. Ionizing radiation is of major important for such devices which are equipped with oxide layer, since much radiation damage especially surface damage are produced. In order to characterize surface damage in silicon oxide, the following measurement methods are present: CV-Measurement, gated-diode technique, and also subthreshold technique for each corresponding devices. some detailed results are discussed so that one could better understand the radiation effect.