Regensburg 2007 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 10: Dielectric and Ferroelectric Thin Films and Nanostructures III
DF 10.8: Vortrag
Donnerstag, 29. März 2007, 16:50–17:10, H48
PrOx/AlON stacks as a high-k candidate on SiC — •Karsten Henkel, Rakesh Sohal, Mohamed Torche, Carola Schwiertz, Yevgen Burkov, and Dieter Schmeißer — Brandenburgische Technische Universität Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-Allee 17, 03046 Cottbus, Germany
We study the chemical stability and electrical properties of Pr-oxides-SiC MIS stacks. In MISFET devices for high power applications the electric field scaling at the interface between semiconductor and insulator is determined by the ratio of their permittivity values. A high-k material can be used to optimize the performance of such devices. In previous studies we had to understand that the chemical reactivity of the PrOx/SiC interface causes a destructive interaction yielding silicate and graphite formation as well as poor electrical performance after direct deposition of PrOx onto SiC. Therefore we introduced an additional chemically inert layer and in this contribution we focus on PrOx/AlON as a suitable insulator stack.
In our spectroscopic investigations we recognized a stable AlON/3C-SiC interface even for annealing steps up to 900∘C. First electrical characterizations are performed on Si substrates and we find a strong improvement in the leakage current by several orders of magnitude down to values of 10−7 A/cm2 at an EOT of 4nm and interface state densities of mean values of 5*1011/eVcm2. We also report on our ongoing electrical characterization of such stacks on SiC substrates.
This work is supported by Deutsche Forschungsgemeinschaft within priority program 1157 (DSCH 745/9-2).