Regensburg 2007 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 11: Poster Session
DF 11.1: Poster
Thursday, March 29, 2007, 14:30–18:00, Poster C
Buffer layer investigation of MFIS stacks with an organic ferroelectric layer — •Bernd Seime, Karsten Henkel, Ioanna Paloumpa, Klaus Müller, and Dieter Schmeißer — Brandenburgische Technische Universität Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-Allee 17, 03046 Cottbus, Germany
Ferroelectric field effect transistors are considered as future non volatile and non destructive readout memory cells. Conventional Perowskite-type ferroelectric materials are shown to work but they need expensive high temperature and high partial pressure processing steps inducing also unintentional and undefined interfacial layers. A possible low cost solution is the use of poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]). This is a ferroelectric polymer which can be spin coated at room temperature onto silicon suited with well defined buffer layers.
Using P[VDF/TrFE] we focus on metal ferroelectric insulator semiconductor (MFIS) structures. In MFIS structure a part of the programming voltage drops over the buffering insulator. We report on attempts to minimize this fraction by optimizing the voltage divider over the buffer and the ferroelectric layers. CV measurements for different thickness of the buffer (10-235nm) and the ferroelectric layer (100nm-1µm) and for different permittivity values of the buffer layer (SiO2, Al2O3, HfO2) will be presented.
This work is supported by Deutsche Forschungsgemeinschaft within priority program 1157 (DSCH 745/11-1).