Regensburg 2007 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 11: Poster Session

DF 11.7: Poster

Thursday, March 29, 2007, 14:30–18:00, Poster C

Amorphous lanthanum lutetium oxide thin films as an alternative high-k gate dielectric — •Joao Marcelo Jordao Lopes¹, Martin Roeckerath¹, Tassilo Heeg¹, Jürgen Schubert¹, Uffe Littmark¹, Siegfried Mantl¹, Valeri Afanasiev², Sheron Shamuilia², Andre Stesmans², Yunfa Jia³, and Darrell Schlom³ — ¹Institute for Bio- and Nanosystems (IBN1-IT), Research Center Jülich, Jülich, Germany — ²Department of Physics, University of Leuven, Leuven, Belgium — ³Department of Materials Science and Engineering, Pennsylvania State University, Pennsylvania, USA

A large number of alternative materials is in discussion to replace SiO₂-based films as the gate dielectric in future MOSFET nanodevices. In this contribution we report results on LaLuO₃ thin films deposited on (100) Si substrates. The films were grown by pulsed laser deposition using a stoichiometric ceramic target. Rutherford backscattering spectrometry, transmission electron microscopy, atomic force microscopy, X-ray diffraction and X-ray reflectometry were employed to structurally investigate the samples. The results indicate the growth of stoichiometric, amorphous, and smooth LaLuO₃ films showing thermal stability up to 1000 ^∘C. Internal photoemission and photoconductivity measurements show a band gap width of 5.2 +/- 0.1 eV and symmetrical conduction and valence band offsets of 2.1 eV at the Si/high-k interface. The electrical characterization also reveal promising results. C-V curves with small hysteresis and free of irregularities were achieved, while I-V measurements indicate low leakage current density levels. Additionally, a k value of 32 was derived from a EOT plot.