Regensburg 2007 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DF: Fachverband Dielektrische Festkörper

DF 11: Poster Session

DF 11.8: Poster

Donnerstag, 29. März 2007, 14:30–18:00, Poster C

Interdiffusion at the interface of high-k Pr₂O₃ layers grown on Si — •Christian Borschel¹, Martin Schnell¹, Hans Hofsäss¹, Christian Wenger², and Carsten Ronning¹ — ¹II. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Göttingen — ²IHP microelectronics, Im Technologiepark 25, D-15236 Frankfurt (Oder)

When scaling down semiconductor devices, the thickness of the gate oxide layer must be reduced to maintain a certain value of gate capacitance. The reduced thickness poses a problem as the leakage tunnelling current increases and with that the power consumption and heat dissipation of the device. As an alternative to SiO₂ as the gate dielectric, rare earth oxides such as Pr₂O₃ have been proposed. To evaluate the feasibility to use these materials, their processability has to be studied, for example their thermal stability is of particular interest. For this purpose high resolution Rutherford backscattering spectrometry experiments with a depth resolution of about 1 nm have been conducted on Pr₂O₃ thin layers grown on Si as a function of annealing temperature. The experiments revealed that significant interdiffusion of both Pr and Si atoms occurs only at annealing temperatures above 800^∘ C.