Regensburg 2007 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

DF: Fachverband Dielektrische Festkörper

DF 8: Dielectric and Ferroelectric Thin Films and Nanostructures II

DF 8.2: Talk

Wednesday, March 28, 2007, 15:10–15:30, H11

Permittivity of sputtered thin films of TiO(2) — •Dieter Mergel, Janika Bolz, and Fred Fürtges — WG Thin Film Technology, Fb Physik, University Duisburg-Essen, 45117 Essen

Thin film capacitors have been prepared on Si substrates with bottom and top electrodes of RuO(2) or In(2)O(3):Sn. The deposition method was rf-diode sputtering. Depending on the details of the process (heating, grounded or floating substrate, sputter pressure, oxygen partial pressure) the TiO(2) films contained mainly anatase or mainly rutile grains or both.

Impedance spectroscopy delivered one semicircle in all cases. The dielectric permittivity at room temperature ranges between 80 and 300. The film stacks with RuO(2) disintegrated during the measurements at higher temperatures but were stable without electric field up to 300°C.