Regensburg 2007 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 8: Dielectric and Ferroelectric Thin Films and Nanostructures II

DF 8.6: Talk

Wednesday, March 28, 2007, 16:30–16:50, H11

Computer simulation of ultralow-k dielectric materials based on C₆₀: Structural, mechanical and dielectric properties — •Kostyantyn Zagorodniy, Helmut Hermann, and Manfred Taut — IFW-Dresden, PF 270116, D-01171 Dresden, Germany

The International Technology Roadmap for Semiconductors (ITRS) predicts that continued scaling of devices will require materials with ultralow dielectric constant. In the present work we propose novel interlayer dielectric materials with ultralow dielectric constants and reasonable mechanical properties for future microelectronic applications. The model structure of the material for investigation consists of fullerene molecule C₆₀ connected by bridge molecules. Classical and quantum-chemical methods are used to optimize the structures and to calculate dielectric and mechanical properties. The dependencies of structural, mechanical and dielectric properties on the bridge length and its realization have been investigated. The (static) dielectric constants, k, and elastic bulk moduli, B, of the proposed materials are in the range of k = 1.7 to 2.2 and B = 5 to 23 GPa, respectively. These values meet the demands of future microelectronic devices.