Regensburg 2007 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 8: Dielectric and Ferroelectric Thin Films and Nanostructures II

DF 8.7: Talk

Wednesday, March 28, 2007, 16:50–17:10, H11

Optimization of porous low-k dielectrics by simulated sphere packings — •Antje Elsner and Helmut Hermann — Institute for Solid State and Materials Research, IFW Dresden, PF 260116, D-01171 Dresden, Germany

Computer generated dense random packings were used as model for porous low-k dielectrics. In this case the pores are represented by spheres whereas the space around spheres stands for the base dielectric material. Main task was to find an optimum parameter set for pore size distributions to get a low dielectric constant. The dielectric constant decreases with increasing porosity but mechanical properties may get worse therefore. The main challenge is to optimize the porous structure so that mechanical properties are acceptable at preferably highest possible porosity. The model of dense packed spheres was then extended to simulate open pore systems with controllable parameters. Properties of open pore systems differ from closed pore systems. Simulations of models with different degree of open porosity and size distributions were analyzed in terms of specific surface, particle penetrability and other properties.