Regensburg 2007 – scientific programme
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DS: Fachverband Dünne Schichten
DS 11: Symposium: New Materials for Nanoelectronics
DS 11.1: Invited Talk
Tuesday, March 27, 2007, 09:30–10:00, H32
Strained silicon for advanced nanotechnology — •Michael Goryll1, Dan Buca1, Qing-Tai Zhao1, Bernd Holländer1, Siegfried Mantl1, Roger Loo2, Duy Nguyen2, and Manfred Reiche3 — 1Institut für Bio- und Nanosysteme (IBN1) und cni, Forschungszentrum Jülich, D-52425 Jülich, Germany — 2IMEC, Kapeldreef 75, B-3001 Leuven, Belgium — 3MPI für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
Introducing strain into silicon layers has shown carrier mobility increase in CMOS devices. Two prevailing approaches, the global strain and the local strain platform, will be presented. While in case of local strain, small-area selective epitaxial SiGe growth is employed, global strain presents more challenges regarding layer deposition. We will discuss our approach towards global strain based on thin pseudomorphic SiGe layers, that are being strain relaxed using He+ ion implantation and thermal annealing. The morphology and crystallinity of the layers was investigated using optical microscopy, atomic force microscopy and transmission electron microscopy. Characterization methods employed to determine the residual strain in the silicon layers comprise angular ion beam scanning and Raman spectroscopy. Strained silicon on insulator (sSOI) layers were produced by layer transfer to an insulating substrate. This process includes wafer bonding as well as splitting performed by H2+ ion implantation and annealing. Electrical measurements on n-channel MOSFETs fabricated on this sSOI material will be presented that exhibit the expected electron mobility enhancement.