Regensburg 2007 – scientific programme

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DS: Fachverband Dünne Schichten

DS 11: Symposium: New Materials for Nanoelectronics

DS 11.2: Invited Talk

Tuesday, March 27, 2007, 10:00–10:30, H32

Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures — •H. Jörg Osten — Institut für Materialien und Bauelemente der Elektronik, Leibniz Universität Hannover, Appelstr. 11A, 30167 Hannover

There are several attempts to increase the material variety that is compatible with Si technologies. The ability to integrate crystalline dielectric barrier layers into silicon structures can open the way for a variety of novel applications ranging from high-K replacements in future MOS devices to oxide/silicon/oxide heterostructures for nanoelectronic application in future quantum-effect devices. First, we will demonstrate and discuss the epitaxial growth of oxides on different oriented Si substrates based on surface and interface considerations. Here, we will present results for crystalline lanthanide oxides on silicon in the cubic bixbyite structure grown by solid state MBE.

Experimental results for Gd₂O₃-based MOS capacitors show that these layers are excellent candidates for application as very thin high-K materials replacing SiO₂ in future MOS devices. In addition, we will present a new approach for nanostructure formation which is based on solid-phase epitaxy of the Si quantum-well combined with simultaneous vapor-phase epitaxy of the insulator on top of the quantum-well. Ultra-thin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by this approach on Si(111). Finally, the incorporation of crystalline Si islands into single-crystalline oxide layers will be demonstrated.