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DS: Fachverband Dünne Schichten
DS 11: Symposium: New Materials for Nanoelectronics
DS 11.6: Hauptvortrag
Dienstag, 27. März 2007, 11:45–12:15, H32
Graphene: A new Electronic Material — •Max Christian Lemme1, Tim Echtermeyer1, Matthias Baus2, and Heinrich Kurz1,2 — 1Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany — 2Institut für Halbleitertechnik, RWTH-Aachen, Sommerfeldstr. 24, 52074 Aachen, Germany
Carbon based electronics offer one of the most promising options to enhance silicon CMOS technology in the future. Great attention has been paid to carbon nanotubes (CNTs) because of their intriguing electronic properties. Their application in electronics, however, will depend strongly on the availability of self organizing processes. Graphene films, monolayers of carbon, have only recently been identified as a new contender for carbon electronics. Graphene's planar form predestinates it as a booster for silicon technology. In this talk, field effect devices (FEDs) manufactured from few- and monolayer graphene are presented. Except for graphene deposition, only conventional top-down CMOS-compatible processes have been used. Raman spectroscopy is presented as the method of choice for distinguishing few- from monolayer graphene. Electron and hole mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs. Even when covered by silicon oxide, the values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.